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MB110 B476W CX16245M IL7805 RB425D1 D2822A E469616 2060C
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  naina s emiconductor 1 d-95, sector 63, noida sales@nainasemi.com thyristor features ? improved glass passivation for high reliability ? exceptional stability at high temperatures ? high di/dt and dv/dt capabilities ? low thermal resistance thermal & mechanical specifications (t parameter operating junction temperature range thermal resistance, junction to case electrical characteristics (t a = 25 0 c unless otherwise parameter maximum average on-state current maximum repetitive peak reverse voltage range forward voltage drop gate current required to trigger gate voltage required to trigger holding current range maximum latching current critical rate of rise of off-state voltage rms isolated voltage maximum ratings (t a = 25 0 c unless otherwise noted) parameter maximum average forward current @ t j = 85 0 c maximum average rms forward current maximum non-repetitive surge current @ t = 10ms maximum i 2 t for fusing @ t = 10ms emiconductor ltd. 13 sector 63, noida C 201301, india ? tel: 0120- 4205450 ? fax: 0120 sales@nainasemi.com ? www.nainasemi.com thyristor C diode module improved glass passivation for high reliability (t a = 25 0 c unless otherwise noted) symbol t j - 65 to +1 r th(jc) c unless otherwise noted) symbol i t(max) maximum repetitive peak reverse voltage range v rrm 200 to 1600 v fm i gt v gt i h i l dv/dt v iso c unless otherwise noted) symbol values units i f(av) 130 a i f(rms) 300 a i fsm 3300 a i 2 t 51 ka 2 s m2 package 13 0ntd 4205450 ? fax: 0120 -4273653 values units 65 to +1 25 0 c 0.18 0 c/w values units 130 a 200 to 1600 v 1.55 v 150 ma 2.5 v 200 ma 300 ma 1000 v/s 3500 v m2 package
naina s emiconductor 2 d-95, sector 63, noida sales@nainasemi.com diode configuration emiconductor ltd. 13 sector 63, noida C 201301, india ? tel: 0120- 4205450 ? fax: 0120 sales@nainasemi.com ? www.nainasemi.com all dimensions in mm 13 0ntd 4205450 ? fax: 0120 -4273653


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